SSM6J23FE 2014-03-01 1 toshiba field effect transistor silicon p channel mos type (u-mos ) SSM6J23FE high current switch ing applications dc-dc converter ? suitable for high-density mounting due to compact package ? low on-resistance: r on = 160 m ? (max) (@v gs = -4.0 v) r on = 210 m ? (max) (@v gs = -2.5 v) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds -12 v gate-source voltage v gss 8 v dc i d -1.2 drain current pulse i dp -4.8 a drain power dissipation p d (note 1) 500 mw channel temperature t ch 150 c storage temperature range t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability signific antly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on fr4 board. (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) marking equivalent circuit handling precaution when handling individual devices (which are not yet mount ed on a circuit board), be sure that the environment is protected against electrostatic discharge. operators should wear anti-static clothing and use containers and other objects that are made of anti-static materials. unit: mm 1,2,5,6 : drain 3 : gate 4 : source jedec - jeita - toshiba 2-2n1a weight: 3 mg (typ.) 6 ke 4 1 2 3 5 4 123 6 5 start of commercial production 2004-02
SSM6J23FE 2014-03-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 8 v, v ds = 0 ? ? 1 a v (br) dss i d = -1 ma, v gs = 0 -12 ? ? drain-source breakdown voltage v (br) dsx i d = -1 ma, v gs = +8 v -4 ? ? v drain cut-off current i dss v ds = -12 v, v gs = 0 ? ? -1 a gate threshold voltage v th v ds = -3 v, i d = -0.1 ma -0.5 ? -1.1 v forward transfer admittance ? y fs ? v ds = -3 v, i d = -0.6a (note2) 1.75 3.5 ? s i d = -0.6 a, v gs = -4 v (note2) ? 110 160 drain-source on-resistance r ds (on) i d = -0.6 a, v gs = -2.5 v (note2) ? 145 210 m input capacitance c iss v ds = -10 v, v gs = 0, f = 1 mhz ? 420 ? pf reverse transfer capacitance c rss v ds = -10 v, v gs = 0, f = 1 mhz ? 75 ? pf output capacitance c oss v ds = -10 v, v gs = 0, f = 1 mhz ? 93 ? pf turn-on time t on ? 23 ? switching time turn-off time t off v dd = ?10 v, i d = ?0.6a v gs = 0 to -2.5 v, r g = 4.7 ? 30 ? ns note2: pulse test switching time test circuit (a) test circuit (b) v in precaution v th can be expressed as the voltage between gate and source when the low oper ating current value is i d = 100 a for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th . (the relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consideration when using the device. (c) v out v dd = -10 v r g = 4.7 duty 1% v in : t r , t f < 5 ns common source ta = 25c v dd out in 0 ?2.5 v 10 s r g i d t f t on 90% 10% 0 v ?2.5 v 90% 10% t off t r v ds ( on ) v dd
SSM6J23FE 2014-03-01 3 i d - v ds -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 -2 -1.5 -1 -0.5 0 drain-source voltage v ds (v) drain current i d (ma) common source ta=25 v gs =-1.8v -2.0v -2.5v -4.0v i d - v gs 0.01 0.1 1 10 100 1000 10000 -2.5 -2 -1.5 -1 -0.5 0 gate-source voltage v gs (v) drain current i d (ma) common source v ds =-3v ta=85 -25 25 - - - - - - - r ds(on) - id 0 100 200 300 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 drain current i d (a) drain-source on-resistance r ds(on) (m) v gs =-4.0v -2.5v common source ta=25 r ds(on) - vgs 0 0.1 0.2 0.3 0.4 0.5 -8 -6 -4 -2 0 gate-source voltage v gs (v) drain-source on-resistance r ds(on) () common source i d =-0.6a ta=85 25 -25 r ds(on) - ta 0 100 200 300 -25 0 25 50 75 100 125 150 ambient temperture ta () drain-source on-resistance r ds(on) () -4.0v v gs =-2.5v common source i d =-0.6a vth - ta -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 -25 0 25 50 75 100 125 150 ambient temperture ta () gate threshold voltage vth(v) common source i d =-0.1ma v ds =-3v
SSM6J23FE 2014-03-01 4 |yfs| - i d 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 drain current i d (a) forward transfer admittance |yfs| (ms) commonm source v ds =-3v ta=25 --- -- c - v ds 1 10 100 1000 0.1 1 10 100 drain-source voltage v ds (v) capacitance c (pf) common source v gs =0v f=1mhz ta=25 c iss c oss c rss - - - - i dr - v ds -2 -1.5 -1 -0.5 0 0 0.2 0.4 0.6 0.8 1 drain-source voltage v ds (v) drain reverse current i dr (a) common source v gs =0 ta=25 i dr d g s t - i d 0.1 1 10 100 1000 0.01 0.1 1 10 drain curren i d (a) switching time t (ns) common source v dd =-10v v gs =0-2.5v ta=25 toff tf ton tr - -- - dynamic input characteristic -10 -8 -6 -4 -2 0 012345678910 tatal gate charge q g (nc) gate-source voltage v gs (v) common source v dd =-10v i d =1.2a ta=25 safe operating area 0.001 0.01 0.1 1 10 0.1 1 10 100 drain-source current v ds (v) drain current i d (a) dc operation ta=25 i d max (continuous) i d max (pulsed) * 1ms 10ms 100ms mounted on fr4 board (25.4 mm ? 25.4 mm ? 1.6 t , cu pad: 645 mm2 ) *:single nonrepetive pulse ta ? 25c curves must be derated linealy with increase in temperture. - - - - - - - - -
SSM6J23FE 2014-03-01 5 p d - ta 0 100 200 300 400 500 600 0 20 40 60 80 100 120 140 160 ambient temperature ta () drain power dissipationp d (mw) mounted on fr4 board (25.4 mm ? 25.4 mm ? 1 .6 t, cu pad: 645 mm2 pulse width t w (s) r th ? t w (mosfet) transient thermal impedance r th (c/w ) 0.001 1000 0.01 0.1 1 100 10 100 1000 1 10 single pulse mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 )
SSM6J23FE 2014-03-01 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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